Discrete GaN transistors, whether in die or packaged forms, offer high power density to boost pulsed signals in C-, L-, and S-band radars and communications applications.
Jack Brown – March 24, 2021
- What are the different materials are used in creating GaN power transistors?
- The impact of heat on performance.
- A rundown of high-power RF GaN transistors currently on the market.
Power electronics have taken an interesting turn toward the adoption of wide bandgap (WBG) devices such as GaN and SiC. While silicon still dominates the market, the emergence of GaN and SiC devices will soon direct technology toward new, more efficient solutions. Yole Développement (Yole) estimates that revenue from SiC devices will account for more than 10% of the market by 2025, while revenue from GaN devices will be more than 2% of the market by 2025.