806-771-7722 info@groupnire.com
1011 Gilbert Dr. Lubbock, Texas


Meet The Next Generation of Power Electronics Devices

Silicon Carbide and Gallium nitride-based semiconductors go beyond the limitations of Silicon-based components.  The wider band gap of SiC and GaN-based devices enables:
- Higher operating temperatures, frequencies, and voltages.
- Smaller more efficient devices.
- Faster switching and lower power losses.

Independent High-Power Device and Design Testing

Group NIRE's Wide Bandgap Reliability Testing Facility is an independent testing facility that can perform reliability analysis of WBG semiconductor devices, with several tests & services. Alongside our Wide Bandgap Testing Facility, our Research & Development center can create custom tests for devices, modules, prototype designs, or product designs.Our services are aimed to:
- Complement gaps in the client's testing capabilities.
- Provide independent testing services to verify or corroborate the client's test results.
- Clients may use our services to aid in determining the suitability of devices for specific applications.
General testing parameters: (Our parameters are constantly improving!)
- Up to 15 kV
- Low Voltage continuous current up to 300 A
- 1 kA pulsed current
- Temperature range of -68° C to 200° C
- Humidity from 30% to 90%

Wide Bandgap Testing
Wide Bandgap Testing
Wide Bandgap Testing

List of Individual Tests and Capabilities!

HTOL: Our High Temperature Reverse Bias test can accommodate up to 6 kV devices and can be run up to 200° C for as long as desired.

HTGB: Our High Temperature Gate Bias test can accommodate a Gate bias of up to +/- 70 V and can be run up to 200° C for as long as desired.

SURGE: Our Surge Current testbed can pulse the DUT with 50-Hz half-sine pulses (10 ms pulse width) up to a maximum pulse current of 1 kA. Both repetitive and non-repetitive surge testing may be conducted.

SHORT CIRCUIT: Our Short Circuit testbed has a maximum short circuit voltage capability of 15 kV. The maximum available short circuit energy is adjustable due to a modular capacitor bank design. The gate drive voltage and external gate resistance can be adjusted to control DUT turn-on.

DI/DT: Our di/dt testbed can conduct di/dt turn-on testing on DUTs with a max pulse current of 600 A.

DV/DT: Our dv/dt test can accommodate DUTs rated between 600 V and 1.6 kV, at a dv/dt rate adjustable up to 300 V/ns or greater.

AVALANCHE: Our testbeds can evaluate the avalanche ruggedness of semiconductor switching devices rated up to 15 kV, and diodes rated up to 1.5 kV.

SWITCHING: Our Switching test can accommodate up to 3.3 kV devices. This test stand can run devices up to 1.5 kW for as long as needed.

TDDB: Our Time Dependent Dielectric Breakdown test can accommodate Gate bias of up to +/-70 V and can be run for as long as desired.

CUSTOM: Our custom testing can accommodate voltages up to 15 kV and currents up to 300 A for any of our offered tests (where applicable). Custom test stands can also be developed for different device, module, or design testing.

CONSULTING: Our R&D team combines experience from many realms of electrical engineering including but not limited to Power Electronics and would like to provide you with consulting services to help you with your next project.


Group NIRE provides presentations by our talented staff, to give you the latest information in the field of Wide Bandgap Testing
SiC testing

"Challenges In Testing SiC Devices"

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Interested in our Testing Services?

Let's Work Together
Discounts available for bulk Device Testing orders and for PowerAmerica Members. To receive a copy of our Pricing Guide click below.

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Featured Work


Together with PowerAmerica, Group  NIRE has begun the research and development of a Wide Band Gap (WBG) dV/dt testbed. This testbed will increase the availability of dV/dt testing and will improve future testbeds for commercial use at the Group NIRE testing facility. This effort has been focused on pushing the limits of dV/dt testing in order to test these WBG devices at the extremes that they are capable of.

"Today’s silicon-based power devices have nearly reached their operational limits.  Industry has shown a need for testing cutting edge wide bandgap devices.  Group NIRE exists in a perfect niche to fill this gap.”

Chief Executive Officer - Principal Electronics Engineer